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IXFN34N80

Part No IXFN34N80
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 34A SOT-227B / N-Channel 800 V 34A (Tc) 600W (Tc) Chassis Mount SOT-227B
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 25 V
Power Dissipation (Max) 600W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1323884-IXFN34N80
Ultra Librarian 3D Model Ultra Librarian IXFN34N80 CAD Model

Description

IXFN34N80 is an N-channel MOSFET with a breakdown voltage of 800 V and a continuous drain current of 34 A.

  • Manufacturer: IXYS
  • Breakdown Voltage: 800 V
  • Continuous Drain Current: 34 A
  • Package: SOT-227B
  • Mounting: Chassis
  • Maximum On-State Resistance: 240mOhm @ 500mA and 10V
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 7500 pF @ 25 V
  • Gate Charge: 270 nC @ 10 V
  • Maximum Power Dissipation @ Tc: 600W
  • Operating Temperature Range: -55°C to 150°C
  • REACH: Unaffected
  • ECCN: EAR99
  • Supplied in: Tube package with a standard package of 10 units
  • Ideal for: high voltage applications where low on-state resistance and high current ratings are required.

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