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Same model may have multiple batches, images only for reference.
IXFP7N80PM
Same model may have multiple batches, images only for reference.

IXFP7N80PM

Part No IXFP7N80PM
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 3.5A TO220AB
Datasheet
IXFP7N80PM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.44Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1890 pF @ 25 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXFP7N80
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378703-IXFP7N80PM
Ultra Librarian 3D Model Ultra Librarian IXFP7N80PM CAD Model

Description

The IXFP7N80PM is a single N-Channel MOSFET from IXYS.

  • Series: HiPerFET™ and Polar
  • Package Type: TO-220-3
  • Drain-to-Source Voltage: 800 V
  • Continuous Drain Current: 3.5A @ 25°C
  • Maximum On-Resistance: 1.44 Ohm @ 3.5A and 10V gate-source voltage
  • Gate Charge: 32nC @ 10V gate-source voltage
  • Operating Temperature Range: -55°C to 150°C

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