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Same model may have multiple batches, images only for reference.
IXFX32N80Q3 Real Image
Same model may have multiple batches, images only for reference.

IXFX32N80Q3

Part No IXFX32N80Q3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 32A PLUS247-3 / N-Channel 800 V 32A (Tc) 1000W (Tc) Through Hole PLUS247™-3
Datasheet
IXFX32N80Q3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Q3 Class
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6940 pF @ 25 V
Power Dissipation (Max) 1000W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3 Variant
Base Product Number IXFX32
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -IXFX32N80Q3
Standard Package 30
Win Source Part Number 1008655-IXFX32N80Q3
Ultra Librarian 3D Model Ultra Librarian IXFX32N80Q3 CAD Model

Description

IXYS HiPerFET MOSFET transistor is a N-channel through-hole type electronic component with drain to source voltage of 800 V and continuous drain current of 32A (Tc).

  • On-Resistance: 270mOhm @ 16A, 10V
  • Gate-Source Voltage: ±30V
  • Package: TO-247-3 Variant package
  • Power Dissipation: 1000W (Tc)
  • Input Capacitance: 6940 pF @ 25 V
  • Gate Charge: 140 nC @ 10 V
  • Application: ideal for use in various electronic applications that require high power and voltage

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