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Same model may have multiple batches, images only for reference.
IXTC160N10T Real Image
Same model may have multiple batches, images only for reference.

IXTC160N10T

Part No IXTC160N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 83A ISOPLUS220 / N-Channel 100 V 83A (Tc) 140W (Tc) Through Hole ISOPLUS220™
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchMV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 25 V
Power Dissipation (Max) 140W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS220™
Package / Case ISOPLUS220™
Base Product Number IXTC160
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346845-IXTC160N10T
Ultra Librarian 3D Model Ultra Librarian IXTC160N10T CAD Model

Description

The IXTX160N10T is a N-Channel MOSFET transistor designed for use in Discrete Semiconductor Products - Transistors - FETs, MOSFETs.

  • Series: TrenchMV™
  • Drain to Source Voltage (Vdss): 100 V
  • Power Dissipation (Max): 140W (Tc)
  • Mounting: Through Hole
  • Package/Case: ISOPLUS220™
  • Temperature Range: -55°C ~ 175°C (TJ)
  • Gate-Source Voltage (Vgs): ±20V
  • Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
  • Supplier: IXYS
  • Status: obsolete

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