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Same model may have multiple batches, images only for reference.
IXTH200N085T Real Image
Same model may have multiple batches, images only for reference.

IXTH200N085T

Part No IXTH200N085T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 85V 200A TO-247
Datasheet
IXTH200N085T Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 85V
Continuous Drain Current at 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 152nC @ 10V
Max Input Capacitance 7600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 480W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049778-IXTH200N085T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH200N085T CAD Model

Description

The IXYS IXTH200N085T is an N-channel MOSFET with a drain-source breakdown voltage of 85V and a continuous drain current of 200A at 25°C.

  • Maximum Rds On: 5 mOhm @ 25A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 152nC @ 10V
  • Maximum Input Capacitance: 7600pF @ 25V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package/Dimension: TO-247-3
  • Power Dissipation: 480W (Tc)
  • Supply and Demand: sufficient

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