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IXTH76N25T

Part No IXTH76N25T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 76A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 4500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 460W (Tc)
Maximum Rds On at Id,Vgs 39 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049834-IXTH76N25T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH76N25T CAD Model

Description

The IXYS 1049834-IXTH76N25T is a MOSFET transistor that is designed for use in a variety of applications.

  • Transistor Type: N-Channel
  • Maximum Power Dissipation: 460W (Tc)
  • Package: TO-247-3
  • Drain-Source Breakdown Voltage: 250V
  • Maximum Rds On: 39 mOhm @ 500mA, 10V

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