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IXTH94N20X4

Part No IXTH94N20X4
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 94A X4 TO-247 / N-Channel 200 V 94A (Tc) 360W (Tc) Through Hole ISO TO-247-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Ultra X4
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10.6mOhm @ 47A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5050 pF @ 25 V
Power Dissipation (Max) 360W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISO TO-247-3
Package / Case TO-247-3
Base Product Number IXTH94
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346864-IXTH94N20X4
Ultra Librarian 3D Model Ultra Librarian IXTH94N20X4 CAD Model

Description

The IXTH94N20X4 is an N-channel MOSFET manufactured by IXYS. It belongs to the Ultra X4 series and is mounted on a TO-247-3 package.

  • Series: Ultra X4
  • Package: TO-247-3
  • Power Dissipation: 360W @ Tc
  • Current Rating: 94A @ 25°C
  • Rds On: 10.6mOhm @ 47A and 10V
  • Gate-Source Voltage: ±20V
  • Gate Charge: 77nC @ 10V
  • Input Capacitance: 5050pF @ 25V
  • Operating Temperature: -55°C to 175°C
  • ECCN: EAR99

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