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IXTK200N10P

Name: IXTK200N10P
Brand: IXYS
SKU: 1066205
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXTK200N10P
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 200A TO264 / N-Channel 100 V 200A (Tc) 800W (Tc) Through Hole TO-264 (IXTK)
Datasheet	IXTK200N10P Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	Polar
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	240 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7600 pF @ 25 V
Power Dissipation (Max)	800W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-264 (IXTK)
Package / Case	TO-264-3, TO-264AA
Base Product Number	IXTK200
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	25
Win Source Part Number	1066205-IXTK200N10P
Ultra Librarian 3D Model	Ultra Librarian IXTK200N10P CAD Model

Alternative Products

Description

The IXYS IXTK200N10P is an N-channel MOSFET type transistor that has a drain to source voltage (Vdss) of 100V and a current-continuous drain (Id) of 200A (Tc).

Drain to Source Voltage (Vdss): 100V
Current-Continuous Drain (Id): 200A (Tc)
Power Dissipation (max): 800W (Tc)
Input Capacitance (Ciss) (max): 7600 pF @ 25 V
Package: TO-264-3, TO-264AA
Mounting Style: Through-hole
Suitable for: various applications such as power supplies, motor control, and welding equipment.

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