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IXTK90N25L2

Part No IXTK90N25L2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 90A TO264  /  N-Channel 250 V 90A (Tc) 960W (Tc) Through Hole TO-264 (IXTK)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series Linear L2™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 33mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 640 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V
Power Dissipation (Max) 960W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-264 (IXTK)
Package / Case TO-264-3, TO-264AA
Base Product Number IXTK90
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 622089
Standard Package 25
Win Source Part Number 1003536-IXTK90N25L2
Ultra Librarian 3D Model Ultra Librarian IXTK90N25L2 CAD Model

Description

IXYS 1003536-IXTK90N25L2 is a N-channel FET type electronic component with a drain to source voltage of 250 V.

  • Manufacturer:IXYS
  • FET Type: N-Channel
  • Drain to Source Voltage: 250 V
  • Power Dissipation: 960W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
  • Series: Linear L2™
  • Mounting Type: Through-Hole
  • Package/Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXTK)
  • Temperature Range - Operating: -55°C ~ 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
29+ $1.7368 $50.3672
62+ $1.6269 $100.8678
96+ $1.5719 $150.9024
137+ $1.4620 $200.2940
178+ $1.4070 $250.4460
222+ $1.3521 $300.1662
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 230 pieces
MOQ: 29 pcs
Order Increment : 1 pcs
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