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Same model may have multiple batches, images only for reference.
IXTN8N150L Real Image
Same model may have multiple batches, images only for reference.

IXTN8N150L

Part No IXTN8N150L
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1500V 7.5A SOT-227B / N-Channel 1500 V 7.5A (Tc) 545W (Tc) Chassis Mount SOT-227B
Datasheet
IXTN8N150L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Linear
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 4A, 20V
Vgs(th) (Max) @ Id 8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 15 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 8000 pF @ 25 V
Power Dissipation (Max) 545W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Base Product Number IXTN8
Standard Package 10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346801-IXTN8N150L
Ultra Librarian 3D Model Ultra Librarian IXTN8N150L CAD Model

Description

The IXTN8N150L is a N-channel MOSFET transistor designed for use in Discrete Semiconductor Products.

  • Drain to Source Voltage (Vdss): 1500 V
  • Power Dissipation (Max): 545W (Tc)
  • Mounting Type: Chassis Mount
  • Package: SOT-227-4, miniBLOC package
  • Series: Linear series
  • Gate to Source Voltage (Vgs): ±30V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Current - Continuous Drain (Id): 7.5A (Tc)
  • Rds On (Max): 3.6Ohm @ 4A, 20V

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