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IXTP12N50PM

Part No IXTP12N50PM
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 6A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1830pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 500 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049860-IXTP12N50PM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP12N50PM CAD Model

Description

The IXTP12N50PM from IXYS is a N-Channel MOSFET that provides a high-performance solution for various applications.

  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1261 $61.9355
125+ $0.9240 $115.5000
195+ $0.8951 $174.5445
270+ $0.8663 $233.9010
345+ $0.8374 $288.9030
465+ $0.7508 $349.1220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 522 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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