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IXTP24N65X2

Part No IXTP24N65X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 24A TO220AB / N-Channel 650 V 24A (Tc) 390W (Tc) Through Hole TO-220-3
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2060 pF @ 25 V
Power Dissipation (Max) 390W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
Base Product Number IXTP24
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1324618-IXTP24N65X2
Ultra Librarian 3D Model Ultra Librarian IXTP24N65X2 CAD Model

Description

The IXTP24N65X2 is a N-channel MOSFET transistor manufactured by IXYS. It has a drain-to-source voltage of 650V and a continuous drain current of 24A (Tc).

  • Maximum on-resistance: 145mOhm @ 12A and 10V
  • Gate charge: 36nC @ 10V
  • Input capacitance: 2060pF @ 25V
  • Maximum gate-source voltage: ±30V
  • Operating temperature range: -55°C to 150°C (TJ)
  • Package: TO-220-3 package
  • Power dissipation: 390W (Tc)
  • Applications: power supplies, motor drives, and lighting systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5781 $52.0290
215+ $0.4744 $101.9960
330+ $0.4596 $151.6680
450+ $0.4447 $200.1150
585+ $0.4299 $251.4915
780+ $0.3854 $300.6120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,117 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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