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Same model may have multiple batches, images only for reference.
IXTP26P10T Real Image
Same model may have multiple batches, images only for reference.

IXTP26P10T

Part No IXTP26P10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 26A TO-220
Datasheet
IXTP26P10T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 3820pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049881-IXTP26P10T
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTP26P10T CAD Model

Description

This electronic component is a MOSFET with the Win Source Part Number of 1049881-IXTP26P10T.

  • Win Source Part Number: 1049881-IXTP26P10T
  • Manufacturer: IXYS
  • Packaging: Tube/Rail
  • Mounting Type: Through Hole
  • Polarity: P-Channel
  • Maximum Power Dissipation: 150W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 26A (Tc)
  • Supply Status: Balanced Demand and Supply
  • Popularity: Medium

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