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Same model may have multiple batches, images only for reference.
IXTP3N100D2 Real Image
Same model may have multiple batches, images only for reference.

IXTP3N100D2

Part No IXTP3N100D2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 3A TO220AB / Trans MOSFET N-CH 1KV 3-Pin(3+Tab) TO-220AB
Datasheet
IXTP3N100D2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Gate Charge (Qg) (Maximum) @ Vgs 37.5nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 1020pF @ 25V
Vgs (Maximum) ±20V
FET Feature Depletion Mode
Power Dissipation (Maximum) 125W (Tc)
Rds On (Maximum) @ Id, Vgs 5.5 Ohm @ 1.5A, 0V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 777661-IXTP3N100D2
Popularity Medium
Supply and Demand Status Limited
Family Name IXTP3N100D2
Introduction Date April 14, 2017
ECCN EAR99
Estimated EOL Date 2033
Ultra Librarian 3D Model Ultra Librarian IXTP3N100D2 CAD Model

Description

The IXYS IXTP3N100D2 is a depletion mode MOSFET manufactured by IXYS.

  • Drain Source Voltage: 1000V
  • Continuous Drain Current @ 25°C: 3A
  • Package: TO-220-3
  • Power Dissipation: 125W
  • Gate Charge @ 5V: 37.5nC
  • Input Capacitance @ 25V: 1020pF
  • Vgs (Maximum): ±20V
  • On-State Resistance @ 1.5A and 0V: 5.5 ohms

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