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Same model may have multiple batches, images only for reference.
IXTP4N60P Real Image
Same model may have multiple batches, images only for reference.

IXTP4N60P

Part No IXTP4N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4A TO220AB / N-Channel 600 V 4A (Tc) 89W (Tc) Through Hole TO-220-3
Datasheet
IXTP4N60P Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series PolarHV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 635 pF @ 25 V
Power Dissipation (Max) 89W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1066203-IXTP4N60P
Ultra Librarian 3D Model Ultra Librarian IXTP4N60P CAD Model

Description

This component is a MOSFET (Metal Oxide) technology product with a N-Channel FET Type.

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
  • Package Type: TO-220-3
  • Standard Package: 50
  • Manufacturer: IXYS

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