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Same model may have multiple batches, images only for reference.
IXTX6N200P3HV Real Image
Same model may have multiple batches, images only for reference.

IXTX6N200P3HV

Part No IXTX6N200P3HV
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 2000V 6A TO247PLUSHV / N-Channel 2000 V 6A (Tc) 960W (Tc) Through Hole TO-247PLUS-HV
Datasheet
IXTX6N200P3HV Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Polar P3™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2000 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25 V
Power Dissipation (Max) 960W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247PLUS-HV
Package / Case TO-247-3 Variant
Base Product Number IXTX6
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346649-IXTX6N200P3HV
Ultra Librarian 3D Model Ultra Librarian IXTX6N200P3HV CAD Model

Description

The IXYS IXTX6N200P3HV is a N-channel MOSFET transistor from the Polar P3™ series of IXYS.

  • Drain to Source Voltage: 2000 V
  • Power Dissipation: 960W (Tc)
  • Package/Case: TO-247-3 Variant
  • Mounting Type: through-hole
  • Supplier Device Package: TO-247PLUS-HV
  • Maximum Vgs: ±20V
  • Temperature Range: -55°C to 150°C (TJ)
  • Designed For: high power applications
  • Rds On (Max): 4Ohm @ 3A, 10V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Ideal Choice For: power supplies, motor control, and other high power applications.

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