The IXTY2N65X2 is a MOSFET transistor from IXYS that is designed for use in discrete semiconductor products such as transistors, FETs, and MOSFETs.

• Channel: N-channel FET
• Drain to Source Voltage (Vdss): 650 V
• Power Dissipation (Max): 55W (Tc)
• Mounting: Surface-mounted
• Package: TO-252-3, DPak (2 Leads + Tab) , SC-63
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250μA
• Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V