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Same model may have multiple batches, images only for reference.
S8550-C-AP Real Image
Same model may have multiple batches, images only for reference.

S8550-C-AP

Part No S8550-C-AP
Manufacturer Micro Commercial Co
Catalog Transistors (BJT) - Single
Datasheet
S8550-C-AP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Micro Commercial Co
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 25 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA, 1V
Power - Max 625 mW
Frequency - Transition 150MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92
Other Names 353-S8550-C-APTB
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1278658-S8550-C-AP
Ultra Librarian 3D Model Ultra Librarian S8550-C-AP CAD Model

Description

It is a component that is no longer in production.

  • Component Type: PNP bipolar transistor
  • Maximum Power Dissipation: 625mW
  • Maximum Collector-Emitter Voltage: 25V
  • Maximum Collector Current: 500mA
  • DC Current Gain: 120 @ 50mA and 1V
  • Transition Frequency: 150MHz

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