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Same model may have multiple batches, images only for reference.
SI1012-TP Real Image
Same model may have multiple batches, images only for reference.

SI1012-TP

Part No SI1012-TP
Manufacturer Micro Commercial Co
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI1012-TP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Micro Commercial Co
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 850mOhm @ 500mA, 2.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 750 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 16 V
Power Dissipation (Max) 150mW (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-523
Package / Case SOT-523
Base Product Number SI1012
Other Names SI1012-TPMSCT,SI1012-TPMSDKR,SI1012-TPMSTR
Standard Package 30,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278245-SI1012-TP
Ultra Librarian 3D Model Ultra Librarian SI1012-TP CAD Model

Description

The SI1012-TP is an N-channel MOSFET transistor with a maximum drain to source voltage of 20V and a continuous drain current of 500mA at 25°C.

  • Rds On: 850mOhm @ 500mA and 2.5V
  • Gate Charge: 750nC @ 4.5V
  • Input Capacitance: 100pF @ 16V
  • Package: SOT-523
  • RoHS Compliant: Yes
  • Temperature Range: -55°C to 150°C
  • ECCN: EAR99

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