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APT10035LLLG

Name: APT10035LLLG
Brand: Microsemi Corporation
SKU: 768657
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	APT10035LLLG
Manufacturer	Microsemi Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 1000V 28A TO-264 / Trans MOSFET N-CH 1KV 28A 3-Pin(3+Tab) TO-264 Tube
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Microsemi Corporation
Series	POWER MOS 7
Packaging	Tube
Channel Type Type	N
Technology	MOSFET
Drain Source Voltage	1000V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Maximum) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs	186nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	5185pF @ 25V
Vgs (Maximum)	±30V
Power Dissipation (Maximum)	690W (Tc)
Rds On (Maximum) @ Id, Vgs	350 mOhm @ 14A, 10V
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Style	Through Hole
Manufacturer Package	TO-264 [L]
Package	TO-264-3, TO-264AA
Win Source Part Number	768657-APT10035LLLG
Popularity	Medium
Supply and Demand Status	Limited
Family Name	APT10035LLLG
Introduction Date	March 16, 1997
ECCN	EAR99
Estimated EOL Date	2025
Ultra Librarian 3D Model	Ultra Librarian APT10035LLLG CAD Model

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Description

The APT10035LLLG is a N-Channel MOSFET, manufactured by Microsemi Corporation.

Package: TO-264AA
Mounting Type: Through-hole
Maximum Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current (Tc): 28A
Maximum Rds On @ 14A, 10V: 350 mOhm
Gate-Source Voltage Threshold @ 2.5mA: 5V
Maximum Gate Charge @ 10V: 186nC
Input Capacitance @ 25V: 5185pF
Maximum Gate-Source Voltage: ±30V
Operating Temperature Range (TJ): -55°C to 150°C
Power Dissipation (Tc): 690W
ECCN: EAR99

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