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APT20M45BVRG

Part No APT20M45BVRG
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 56A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 195nC @ 10V
Max Input Capacitance 4860pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Dimension TO-247-3
Win Source Part Number 1017995-APT20M45BVRG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APT20M45BVRG CAD Model

Description

The APT20M45BVRG is a 200V, 24A Power MOS 8 MOSFET from Microsemi, designed for high-performance power switching applications. It features a low RDS(on) and fast switching speeds, making it suitable for efficient power conversion.

Applications

  • Switch-mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)
  • Power factor correction (PFC) circuits
  • DC-DC converters
  • Motor control

Features

  • Low RDS(on)
  • Fast switching speeds
  • Avalanche energy rated
  • RoHS compliant
  • Temperature compensated
  • Simple drive requirements

Benefits

  • High efficiency in power conversion due to low RDS(on), minimizing conduction losses.
  • Reduced switching losses due to fast switching speeds, leading to higher overall efficiency.
  • Robustness in demanding applications due to avalanche energy rating.
  • Environmentally friendly due to RoHS compliance.
  • Stable performance over a wide temperature range due to temperature compensation.
  • Simplified gate drive circuitry due to simple drive requirements.

Additional Details

The APT20M45BVRG has a drain-source voltage (VDS) rating of 200V and a continuous drain current (ID) of 24A. The low RDS(on) minimizes conduction losses, and the fast switching speeds reduce switching losses, resulting in high overall efficiency. The device is designed to withstand high avalanche energy, ensuring reliability in demanding applications. The gate-source voltage is typically ±30V. The operating and storage temperature range is -55°C to +150°C. It is available in a TO-247 package.

This MOSFET is well-suited for use in a wide range of power conversion applications where high efficiency, fast switching speeds, and robustness are critical. Its characteristics make it ideal for demanding applications such as switch-mode power supplies, uninterruptible power supplies, and motor control.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.9660 $59.3200
48+ $2.4336 $116.8128
74+ $2.3576 $174.4624
102+ $2.2816 $232.7232
131+ $2.2055 $288.9205
176+ $1.9774 $348.0224
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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