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Same model may have multiple batches, images only for reference.
JAN2N6796U
Same model may have multiple batches, images only for reference.

JAN2N6796U

Part No JAN2N6796U
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 18-LCC
Datasheet
JAN2N6796U Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/557
Packaging Bulk
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 28.51nC @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 800mW (Ta), 25W (Tc)
Rds On (Maximum) @ Id, Vgs 195 mOhm @ 8A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 18-ULCC (9.14x7.49)
Package 18-BQFN Exposed Pad
Win Source Part Number 762314-JAN2N6796U
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name 2N6796U
Introduction Date September 17, 2008
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian JAN2N6796U CAD Model

Description

The Microsemi Corporation 2N6796U is a MOSFET transistor.

  • Series: Military, MIL-PRF-19500/557
  • Current Continuous Drain (Id): 8A (Tc) @ 25°C
  • Maximum Power Dissipation: 800mW (Ta), 25W (Tc)
  • Packaging: 18-BQFN Exposed Pad
  • Operating Temperature: -55°C to 150°C (TJ)
  • Maximum Drain-Source Voltage: 100V
  • Maximum Gate-Source Voltage: ±20V
  • Gate Charge (Qg): 28.51nC @ 10V
  • Maximum Rds On: 195 mOhm @ 8A, 10V
  • Supply and Demand Status: Limited

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