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Same model may have multiple batches, images only for reference.
MRF581G Real Image
Same model may have multiple batches, images only for reference.

MRF581G

Part No MRF581G
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | RF TRANS NPN 18V 5GHZ MICRO X
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Maximum) 18V
Frequency - Transition 5GHz
Noise Figure (dB Typ at f) 3dB ~ 3.5dB at 500MHz
Gain 13dB ~ 15.5dB
Maximum Power 1.25W
DC Current Gain (hFE) (Minimum) at Ic, Vce 50 at 50mA, 5V
Current - Collector (Ic) (Maximum) 200mA
Temperature Range - Operating 150°C
Mounting Style SMD
Manufacturer Package Micro-X ceramic (84C)
Supplier Device Package Micro-X ceramic (84C)
Family Part Number MRF581
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 711364-MRF581G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MRF581G CAD Model

Description

The MRF581G is a discrete semiconductor product manufactured by Microsemi Corporation.

  • Popularity: Medium
  • Supply and Demand Status: balance
  • Application: high gain and frequency transition of 5GHz
  • Transistor Type: NPN
  • Mount: Surface Mount
  • Supplier Device Package: Micro-X ceramic (84C)
  • Maximum Power: 1.25W
  • Noise Figure: 3dB ~ 3.5dB @ 500MHz

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