The 2SJ213 is a P-channel power MOSFET manufactured by NEC (now Renesas Electronics). It's designed for audio amplifier applications and other general-purpose switching and amplification circuits requiring high fidelity and low distortion.

Applications:

• Audio amplifiers (power amplifiers, preamplifiers)
• Analog switches
• DC-DC converters
• Power management circuits
• General-purpose switching applications

Features:

• P-Channel MOSFET
• Low on-resistance (RDS(on))
• High input impedance
• Fast switching speed
• High power dissipation
• Available in a through-hole package (typically TO-220)

Benefits:

• Provides high-quality audio amplification with minimal distortion.
• Enables efficient power switching and control.
• Simplified circuit design due to high input impedance.
• Suitable for a wide range of operating frequencies.
• Reliable performance in demanding audio and power applications.

Technical Specifications:

Transistor Type: P-Channel MOSFET

Drain-Source Voltage (VDS): -150V

Gate-Source Voltage (VGS): ±20V

Continuous Drain Current (ID): -7A

Power Dissipation (PD): 40W

On-State Resistance (RDS(on)): 0.8 Ohms @ VGS=-10V, ID=-3.5A

Gate Threshold Voltage (VGS(th)): -1.0 to -3.0V

Input Capacitance (Ciss): 750 pF

Operating Temperature Range: -55°C to +150°C

Package: TO-220AB

Manufacturer: Renesas Electronics (formerly NEC)