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UPA1872GR-TG-E1

Part No UPA1872GR-TG-E1
Manufacturer NEC
Catalog HOT - SALES and EOL Components (U - Z)
Sample
Rohs State rohs
ECAD Module
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Manufacturer NEC
Win Source Part Number 389238-UPA1872GR-TG-E1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPA1872GR-TG-E1 CAD Model

Description

The UPA1872GR-TG-E1 is a power MOSFET manufactured by NEC (now Renesas Electronics). It is designed for efficient power switching applications, likely found in DC-DC converters and load management systems. The 'TG' likely indicates a specific package type. The 'E1' signifies compliance with environmental standards like RoHS.

Applications:

  • DC-DC converters
  • Power management circuits
  • Load switches
  • Battery charging circuits
  • Synchronous rectification

Features:

  • Low on-resistance: Minimizes power loss and improves efficiency.
  • High-speed switching: Enables faster switching frequencies and reduces switching losses.
  • Logic level drive: Allows direct driving from logic circuits, simplifying circuit design.
  • Surface mount package: Facilitates automated assembly and compact design.
  • RoHS compliant: Meets environmental standards for hazardous substances.

Benefits:

  • High efficiency: Reduced power dissipation leads to increased energy savings.
  • Simplified design: Logic level drive reduces component count and simplifies interfacing.
  • Compact size: Surface mount package allows for smaller and more efficient circuit layouts.
  • Improved thermal performance: Lower power dissipation minimizes heat generation.
  • Environmentally friendly: RoHS compliance ensures compliance with environmental regulations.

Technical Specifications:

While specific details can vary, typical specifications include:

  • Drain-Source Voltage (V DSS): Typically 30V
  • Gate-Source Voltage (V GS): Typically ±20V
  • Continuous Drain Current (I D): Several Amperes, depending on the package and operating conditions.
  • On-Resistance (R DS(on)): Very low, in the milliohm range (dependent on V GS and I D)
  • Gate Threshold Voltage (V GS(th)): Suitable for logic-level drive
  • Total Gate Charge (Q g): Low, for fast switching performance

Refer to the manufacturer's datasheet for complete specifications and application information.

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