BSP220,115

Part No BSP220,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 225MA SOT223 / P-Channel 200 V 225mA (Ta) 1.5W (Ta) Surface Mount SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 225mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 90 pF @ 25 V
Power Dissipation (Max) 1.5W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Base Product Number BSP220
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 568-6221-6,1727-4929-2,BSP220,115-ND,1727-4929-1,1727-4929-6,568-6221-2,568-6221-1,568-6221-6-ND,2156-BSP220,115-1727,BSP220 T/R,568-6221-2-ND,934000490115,568-6221-1-ND,BSP220 T/R-ND
Standard Package 1,000
Win Source Part Number 1120389-BSP220,115

Description

The Nexperia USA Inc. electronic component is a P-Channel MOSFET transistor with a Win Source Part Number of 1120389-BSP220,115. It features a Drain to Source Voltage (Vdss) of 200 V and an Input Capacitance (Ciss) (Max) @ Vds of 90 pF @ 25 V. It has a standard package of 1,000 and a maximum power dissipation of 1.5W (Ta). The package/case is TO-261-4, TO-261AA and the supplier device package is SOT-223.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
120+ $0.4255 $51.0600
255+ $0.3981 $101.5155
395+ $0.3844 $151.8380
565+ $0.3569 $201.6485
730+ $0.3432 $250.5360
915+ $0.3295 $301.4925
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 6,740 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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