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Same model may have multiple batches, images only for reference.
BSP220,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BSP220,115

Part No BSP220,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 225MA SOT223  /  P-Channel 200 V 225mA (Ta) 1.5W (Ta) Surface Mount SOT-223
Datasheet
BSP220,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 225mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 90 pF @ 25 V
Power Dissipation (Max) 1.5W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Base Product Number BSP220
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 568-6221-6,1727-4929-2,BSP220,115-ND,1727-4929-1,1727-4929-6,568-6221-2,568-6221-1,568-6221-6-ND,2156-BSP220,115-1727,BSP220 T/R,568-6221-2-ND,934000490115,568-6221-1-ND,BSP220 T/R-ND
Standard Package 1,000
Win Source Part Number 1120389-BSP220,115
Ultra Librarian 3D Model Ultra Librarian BSP220,115 CAD Model

Description

The Nexperia USA Inc. electronic component is a P-Channel MOSFET transistor with a Win Source Part Number of 1120389-BSP220,115.

  • Drain to Source Voltage (Vdss): 200 V
  • Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
  • Package: 1,000
  • Maximum Power Dissipation: 1.5W (Ta)
  • Package/Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223

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Quantity Unit Price Ext. Price
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105+ $0.9625 $101.0625
165+ $0.9324 $153.8460
225+ $0.9023 $203.0175
290+ $0.8722 $252.9380
385+ $0.7820 $301.0700
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