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Same model may have multiple batches, images only for reference.
BSS138BKS,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BSS138BKS,115

Part No BSS138BKS,115
Manufacturer Nexperia USA Inc.
Catalog TRANSISTORS
Description MOSFETs 60 V, 320 mA dual N-channel Trench MOSFET
Datasheet
BSS138BKS,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Nexperia
Technology Si
Mounting Style SMD/SMT
Package / Case TSSOP-6
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 320 mA
Rds On - Drain-Source Resistance 1.6 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 480 mV
Qg - Gate Charge 600 pC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 280 mW
Channel Mode Enhancement
Series BSS138BKS
Packaging Cut Tape
Packaging MouseReel
Packaging Reel
Brand Nexperia
Product Type MOSFETs
Standard Pack Qty 3000
Subcategory Transistors
Ultra Librarian 3D Model Ultra Librarian BSS138BKS,115 CAD Model

Description

The Nexperia USA Inc. BSS138BKS,115 is a dual N-channel logic level gate FET designed for use in electronic circuits.

  • Type: Dual N-Channel Logic Level Gate FET
  • Maximum Power Dissipation: 445mW
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 320mA
  • Gate-Source Threshold Voltage: 1.6V @ 250μA
  • Maximum Gate Charge: 0.7nC @ 4.5V
  • Maximum Input Capacitance: 56pF @ 10V
  • Maximum Rds On @ Id,Vgs: 1.6 Ohm @ 320mA, 10V
  • Suitable for: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3538 $51.3010
305+ $0.3314 $101.0770
470+ $0.3202 $150.4940
675+ $0.2978 $201.0150
875+ $0.2866 $250.7750
1,090+ $0.2754 $300.1860
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