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Same model may have multiple batches, images only for reference.
BUK7E1R9-40E,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK7E1R9-40E,127

Part No BUK7E1R9-40E,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A I2PAK  /  N-Channel 40 V 120A (Tc) 324W (Tc) Through Hole I2PAK
Datasheet
BUK7E1R9-40E,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9700 pF @ 25 V
Power Dissipation (Max) 324W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 568-10286,568-10286-5-ND,NEXNEXBUK7E1R9-40E,127,934066982127,BUK7E1R9-40E,127-ND,2156-BUK7E1R9-40E,127-NEX,568-10286-ND,568-10286-5,1727-1131
Standard Package 50
Win Source Part Number 1013791-BUK7E1R9-40E,127
Ultra Librarian 3D Model Ultra Librarian BUK7E1R9-40E,127 CAD Model

Description

The BUK7E1R9-40E,127 is a N-Channel MOSFET (Metal Oxide) transistor from Nexperia USA Inc.

  • Series: Automotive, AEC-Q101, TrenchMOS™ series
  • Package: through-hole TO-262-3 Long Leads, I²Pak, TO-262AA package.
  • Voltage: drain to source voltage (Vdss) of 40 V
  • Current: continuous drain current (Id) of 120A (Tc) @ 25°C.
  • Rds On (Max): 1.9mOhm @ 25A, 10V
  • Vgs(th) (Max): 4V @ 1mA.
  • Gate Charge (Qg): 118 nC @ 10 V
  • Input Capacitance (Ciss): 9700 pF @ 25 V.
  • Power Dissipation (Max): 324W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ).
  • Status: This transistor is obsolete and has an ECCN of EAR99.

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