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BUK9608-55B,118

Part No BUK9608-55B,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 45nC @ 5V
Max Input Capacitance 5280pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 203W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025373-BUK9608-55B,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK9608-55B,118 CAD Model

Description

The Nexperia USA Inc. BUK9608-55B,118 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 75A
  • Maximum Rds On: 7 mOhm @ 25A and 10V
  • Maximum Gate-Source Voltage: ±15V
  • Maximum Gate Charge: 45nC @ 5V
  • Maximum Input Capacitance: 5280pF @ 25V
  • Case/Package: D2PAK
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.8957 $57.9140
49+ $2.3761 $116.4289
76+ $2.3018 $174.9368
104+ $2.2275 $231.6600
135+ $2.1533 $290.6955
180+ $1.9305 $347.4900
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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