The Nexperia USA Inc. PBSS4160V is an NPN transistor designed for use in discrete semiconductor products. With a voltage - collector emitter breakdown (maximum) of 60V and a frequency - transition of 220MHz, this transistor is capable of handling a wide range of applications. It has a power - max of 500mW and a current - collector (Ic) (maximum) of 900mA. The PBSS4160V is available in a SOT-563, SOT-666 package and has a Vce saturation (maximum) @ Ib, Ic of 250mV @ 100mA, 1A. This transistor is compliant with halogen-free standards and is manufactured in Malaysia. Its estimated EOL date is 2027. and a limited supply and demand status.

• Collector Emitter Breakdown Voltage: 60V
• Frequency Transition: 220MHz
• Power - Max: 500mW
• Current - Collector (Ic) (Maximum): 900mA
• Vce saturation (maximum) @ Ib, Ic: 250mV @ 100mA, 1A