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Same model may have multiple batches, images only for reference.
PBSS8110Z,135 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS8110Z,135

Part No PBSS8110Z,135
Manufacturer Nexperia USA Inc.
Catalog TRANSISTORS
Description Bipolar Transistors - BJT 100 V, 5.2 A NPN low V_CEsat (BISS) transistor
Datasheet
PBSS8110Z,135 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Nexperia
Mounting Style SMD/SMT
Package / Case SOT-223-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 100 V
Collector- Base Voltage VCBO 120 V
Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 200 mV
Maximum DC Collector Current 1 A
Pd - Power Dissipation 1.4 W
Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C
Packaging Cut Tape
Packaging MouseReel
Packaging Reel
Height 1.7 mm
Length 6.7 mm
Technology Si
Width 3.7 mm
Brand Nexperia
Product Type BJTs - Bipolar Transistors
Standard Pack Qty 4000
Subcategory Transistors
Ultra Librarian 3D Model Ultra Librarian PBSS8110Z,135 CAD Model

Description

The PBSS8110Z,135 is an NPN transistor produced by Nexperia USA Inc.

  • Package: Reel-TR
  • Mounting: SMD (SMT)
  • Maximum Collector-Emitter Breakdown Voltage: 100V
  • Maximum Power Dissipation: 1.4W
  • Transistor Polarity: NPN
  • Status: Active
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4752 $52.2720
225+ $0.4452 $100.1700
350+ $0.4301 $150.5350
500+ $0.4000 $200.0000
650+ $0.3850 $250.2500
815+ $0.3700 $301.5500
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