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Same model may have multiple batches, images only for reference.
PSMN013-100BS,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN013-100BS,118

Part No PSMN013-100BS,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 68A D2PAK
Datasheet
PSMN013-100BS,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 3195pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 13.9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1090321-PSMN013-100BS,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN013-100BS,118 CAD Model

Description

The PSMN013-100BS,118 N-channel MOSFET from Nexperia USA Inc. is a high-quality electronic component that offers reliable performance and durability.

  • Power Dissipation (Max): 170W (Tc)
  • Continuous Drain Current @ 25°C: 68A (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On @ Id, Vgs: 13.9 mOhm @ 15A, 10V
  • Mounting Type: Surface Mount
  • Case/Package: D2PAK

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