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Same model may have multiple batches, images only for reference.
PSMN027-100PS,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN027-100PS,127

Part No PSMN027-100PS,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V TO220AB
Datasheet
PSMN027-100PS,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1624pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 103W (Tc)
Maximum Rds On at Id,Vgs 26.8 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1090343-PSMN027-100PS,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PSMN027-100PS,127 CAD Model

Description

The Nexperia USA Inc. PSMN027-100PS,127 is an N-channel MOSFET.

  • Maximum Power Dissipation: 103W (Tc)
  • Continuous Drain Current: 37A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 30nC @ 10V
  • Maximum Input Capacitance: 1624pF @ 50V
  • Maximum Rds On at Id, Vgs: 26.8 mOhm @ 15A, 10V
  • Breakdown Voltage: 100V
  • Drive Voltage: 10V
  • Package: TO-220AB
  • Mounting Type: Through Hole
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Popularity: Medium
  • Supply and Demand: Sufficient

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