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Same model may have multiple batches, images only for reference.
PSMN034-100PS,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN034-100PS,127

Part No PSMN034-100PS,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V TO220AB
Datasheet
PSMN034-100PS,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 23.8nC @ 10V
Max Input Capacitance 1201pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 86W (Tc)
Maximum Rds On at Id,Vgs 34.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1090348-PSMN034-100PS,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PSMN034-100PS,127 CAD Model

Description

The Nexperia USA Inc. PSMN034-100PS,127 is a N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 32A @ 25°C.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 32A @ 25°C
  • Mounting Type: Through-Hole
  • Maximum Power Dissipation: 86W (Tc)
  • Maximum Rds On: 34.5 mOhm @ 15A and 10V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 23.8nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1201pF @ 50V
  • Package: TO-220AB
  • Dimension: TO-220-3
  • Product Category: Discrete Semiconductor Products
  • Product Status: Active

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