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Same model may have multiple batches, images only for reference.
PSMN6R9-100YSFX Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN6R9-100YSFX

Part No PSMN6R9-100YSFX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A LFPAK56 / N-Channel 100 V 100A (Tc) 238W Surface Mount LFPAK56, Power-SO8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 50.3 nC @ 10 V
Power Dissipation (Max) 238W
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
Base Product Number PSMN6R9
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,500
Win Source Part Number 1086144-PSMN6R9-100YSFX
Ultra Librarian 3D Model Ultra Librarian PSMN6R9-100YSFX CAD Model

Description

The PSMN6R9-100YSFX is an N-Channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Continuous Drain Current: Up to 100A @ 25°C
  • Maximum Drain-Source Voltage: 100V
  • Gate Charge: 50.3 nC @ 10V
  • Package: SC-100, SOT-669
  • Power Dissipation: 238W
  • Temperature Range: 175°C (TJ)

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Quantity Unit Price Ext. Price
40+ $1.6001 $64.0040
90+ $1.3130 $118.1700
140+ $1.2720 $178.0800
190+ $1.2309 $233.8710
245+ $1.1899 $291.5255
325+ $1.0668 $346.7100
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