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Same model may have multiple batches, images only for reference.
MJ10009 Mospec
Same model may have multiple batches, images only for reference.

MJ10009

Part No MJ10009
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 500V 20A TO3
Datasheet
MJ10009 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Series SWITCHMODE™
Package Bag
Product Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 20 A
Voltage - Collector Emitter Breakdown (Max) 500 V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 2A, 20A
Current - Collector Cutoff (Max) 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 5A, 5V
Power - Max 175 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-3
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 640851-MJ10009
Ultra Librarian 3D Model Ultra Librarian MJ10009 CAD Model

Description

The MJ10009 is a NPN Darlington Bipolar Transistor designed for high power audio, switching and linear applications.

  • Transistor Type: NPN Darlington Bipolar Transistor
  • Applications: High Power Audio, Switching, Linear
  • Collector-Emitter Breakdown Voltage: 500V
  • Maximum Power Dissipation: 175W
  • Maximum Collector Current: 20A
  • DC Current Gain: 40 @ 5A and 5V
  • Vce Saturation: 3.5V @ 2A and 20A
  • Package: TO-3
  • Operating Temperature Range: -65°C to 200°C
  • Series: SWITCHMODE™
  • Packaging: Bag

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.7944 $58.7664
13+ $8.0364 $104.4732
20+ $7.7853 $155.7060
27+ $7.5341 $203.4207
35+ $7.2830 $254.9050
46+ $6.5296 $300.3616
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,600 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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