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Same model may have multiple batches, images only for reference.
NTE123 NTE
Same model may have multiple batches, images only for reference.

NTE123

Part No NTE123
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 0.8A TO39
Datasheet
NTE123 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Package Bag
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 800 mW
Frequency - Transition 300MHz
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 649775-NTE123
Ultra Librarian 3D Model Ultra Librarian NTE123 CAD Model

Description

The NTE123 is a NPN bipolar transistor designed for use in general-purpose amplifier and switching applications.

  • Transistor Type: NPN Bipolar
  • Applications: General-Purpose Amplifier and Switching
  • Maximum Power Rating: 800 mW
  • Maximum Collector-Emitter Breakdown Voltage: 40 V
  • Maximum Collector Current: 800 mA
  • Saturation Voltage: 1V @ 500mA
  • DC Current Gain: 100 @ 150mA and 10V
  • Package: TO-205AD, TO-39-3 metal can
  • Thermal Conductivity: Excellent
  • Mechanical Stability: Excellent
  • Operating Temperature Range: -65°C to 200°C
  • Product Status: Active
  • Supplier: NTE

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Availability: 4,800 pieces
MOQ: 23 pcs
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