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BF1216,115

Part No BF1216,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 6V 400MHZ 6TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity N-Channel Dual Gate
Frequency 400MHz
Gain 30dB
Voltage - Test 5V
Current Rating 30mA
Noise Figure 1dB
Current - Test 19mA
Voltage Rating 6V
Case / Package 6-TSSOP
Win Source Part Number 099921-BF1216,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BF1216,115 CAD Model

Description

The NXP BF1216,115 is a state-of-the-art silicon N-channel dual-gate MOSFET designed to meet the high demands of contemporary RF amplification and mixing applications. Manufactured by NXP Semiconductors, a leader in the electronic components industry, this MOSFET is engineered to provide exceptional performance in a compact form factor.

Key Features

  • High Gain: The device offers high forward transconductance, which translates to excellent gain characteristics, making it suitable for various amplification stages.
  • Low Noise Figure: With its low noise figure, the BF1216,115 ensures a clean and clear signal, which is essential for high-quality RF applications.
  • Dual-Gate Design: The dual-gate functionality allows for greater control and stability of the signal, providing enhanced performance in mixer and oscillator circuits.
  • High-Frequency Operation: This MOSFET is capable of operating at high frequencies, making it ideal for VHF and UHF applications.
  • Surface-Mount Package: The BF1216,115 comes in a small SOT-363 package, which is perfect for space-constrained applications and allows for efficient assembly in automated manufacturing processes.

Applications

The NXP BF1216,115 MOSFET is versatile and can be used in a variety of applications, including:

  • RF amplifiers in telecommunication systems
  • Mixers and oscillators in RF circuits
  • VHF/UHF tuners and satellite receivers
  • High-frequency signal processing

Reliability and Quality

NXP's commitment to quality ensures that the BF1216,115 MOSFET is produced to the highest standards. It is designed to withstand the rigorous demands of industrial and consumer electronic devices. The device's reliability is backed by NXP's extensive testing and quality control processes, which guarantee performance even under challenging conditions.

Summary

In summary, the NXP BF1216,115 is a high-performance, dual-gate MOSFET that offers excellent gain, low noise, and high-frequency operation. Its compact surface-mount package makes it an ideal choice for modern RF applications where space and signal integrity are critical. With NXP's reputation for quality, this MOSFET is an excellent choice for designers looking to enhance their RF signal chains.

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Pricing & Ordering

Quantity Unit Price Ext. Price
190+ $0.2638 $50.1220
465+ $0.2165 $100.6725
720+ $0.2097 $150.9840
990+ $0.2030 $200.9700
1,275+ $0.1962 $250.1550
1,710+ $0.1759 $300.7890
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 190 pcs
Order Increment : 1 pcs
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