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BLC8G24LS-240AVJ

Part No BLC8G24LS-240AVJ
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS RF 240W 65V LDMOS SOT1252  /  RF Mosfet LDMOS (Dual) 30 V 800 mA 2.3GHz ~ 2.4GHz 15dB 63W SOT1252-1
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel (TR)
Transistor Type LDMOS (Dual)
Frequency 2.3GHz ~ 2.4GHz
Gain 15dB
Voltage - Test 30 V
Current - Test 800 mA
Power - Output 63W
Voltage - Rated 65 V
Package / Case SOT-1252-1
Supplier Device Package SOT1252-1
Base Product Number BLC8
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 934067995118
Standard Package 100
Win Source Part Number 1021818-BLC8G24LS-240AVJ
Ultra Librarian 3D Model Ultra Librarian BLC8G24LS-240AVJ CAD Model

Description

Introducing the BLC8G24LS-240AVJ RF Power Transistor

The BLC8G24LS-240AVJ is a state-of-the-art RF power LDMOS transistor designed and manufactured by NXP Semiconductors. This robust transistor is specifically engineered to meet the demands of high-performance RF energy applications, particularly in the 2400 MHz to 2500 MHz frequency range. It is an ideal solution for a variety of uses, including but not limited to industrial, scientific, and medical (ISM) applications, RF heating, plasma generation, and laser excitation.

Key Features:

  • Wide Frequency Range: The BLC8G24LS-240AVJ operates efficiently over a broad frequency spectrum, making it versatile for various RF applications.
  • High Power: With an impressive output power of 240 watts, this LDMOS transistor can handle demanding applications that require a high level of signal strength.
  • Excellent Thermal Performance: The device is encapsulated in a ceramic package that offers superior thermal performance, ensuring reliability and longevity even under high-temperature operations.
  • Integrated ESD Protection: The transistor comes with built-in electrostatic discharge (ESD) protection, safeguarding the device from unexpected voltage spikes and enhancing its durability.
  • Gain and Efficiency: The BLC8G24LS-240AVJ boasts high gain and efficiency, which translates to better signal quality and lower power consumption.

Applications:

The versatility of the BLC8G24LS-240AVJ makes it suitable for a wide array of applications. It is particularly well-suited for ISM band applications, where consistent and reliable RF power is critical. Other applications include professional cooking, defrosting, drying, and semiconductor manufacturing, where precise control and efficiency are paramount.

Quality and Support:

NXP Semiconductors is renowned for their commitment to quality and the BLC8G24LS-240AVJ is no exception. Customers can expect rigorous testing and quality control, ensuring that each transistor meets the highest industry standards. Additionally, NXP provides comprehensive technical support, including detailed datasheets, application notes, and design resources to assist engineers in integrating this powerful transistor into their designs.

For those looking to enhance their RF applications with a reliable and high-performing power transistor, the BLC8G24LS-240AVJ from NXP is an excellent choice that combines power, efficiency, and durability.

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