Product Overview: BUK9509-75A - NXP
The BUK9509-75A is a high-performance, N-channel TrenchMOS™ standard level FET produced by NXP Semiconductors, designed to deliver efficient power management and conversion in a wide array of applications. This power MOSFET is particularly well-suited for automotive applications and is part of NXP's commitment to providing robust and reliable components for the automotive industry.
Key Features
- Low On-State Resistance (R<sub>DS(on)): The BUK9509-75A offers a low on-state resistance, which results in minimal power loss and improved efficiency in conducting mode.
- High Continuous Current: With the capability to handle a high continuous current, this MOSFET can be used in high-power applications without performance degradation.
- Standard Level Gate Drive: The device operates with standard level gate drives, making it compatible with most existing control circuits and simplifying design integration.
- 175°C Operating Temperature: The MOSFET is designed to withstand high temperatures, ensuring reliability and stability even under thermal stress.
- Automotive Qualified: Meeting the stringent requirements of the automotive industry, the BUK9509-75A is AEC-Q101 qualified, ensuring its suitability for vehicular applications.
Applications
The versatility of the BUK9509-75A allows it to be utilized in various applications, particularly in the automotive sector, including:
- DC/DC converters
- Motor drives
- Power management systems
- Load switches
- Battery management systems
Product Specifications
Parameter
Value
Drain-source voltage (V<sub>DS)
75 V
Continuous drain current (I<sub>D)
75 A
Power dissipation (P<sub>D)
110 W
On-state resistance max (R<sub>DS(on))
6.5 mΩ
Configuration
Single
With its robust design and high performance, the BUK9509-75A by NXP stands as a reliable choice for designers looking to implement efficient power management solutions in automotive and other high-demand systems.