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MRF281SR1

Part No MRF281SR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 1.93GHZ NI-200S / Trans RF MOSFET N-CH 65V 3-Pin NI-200S T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 1.93GHz
Gain 12.5dB
Voltage - Test 26V
Current - Test 25mA
Power - Output 4W
Voltage Rating DC 65V
Package NI-200S
Manufacturer Package NI-200S
Win Source Part Number 789409-MRF281SR1
Popularity Medium
Supply and Demand Status Limited
Family Name MRF281S
Introduction Date April 13, 2000
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF281SR1 CAD Model

Description

Introducing the MRF281SR1 from NXP Semiconductors

The MRF281SR1 is a state-of-the-art RF power LDMOS transistor designed by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This product is specifically engineered to deliver exceptional performance in RF power amplification applications. The MRF281SR1 is an ideal choice for a wide array of uses, including broadcast transmitters, cellular base stations, and RF heating applications. Its robust design ensures reliable operation even under the most demanding conditions.

At the heart of the MRF281SR1 is NXP's advanced LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, which is renowned for its high efficiency, gain, and thermal performance. The device operates within the 2,100 to 2,170 MHz frequency range, making it highly suitable for 2.1 GHz wireless communication systems. It boasts an impressive output power of 16 W (CW) with high gain performance, ensuring clear and powerful signal amplification.

Key Features of the MRF281SR1:

  • Frequency Range: Designed to operate efficiently in the 2,100 to 2,170 MHz range.
  • Output Power: Capable of delivering a continuous wave (CW) output power of 16 W.
  • High Gain: Offers excellent gain performance, which is essential for effective signal amplification.
  • Efficiency: Built with LDMOS technology that provides enhanced efficiency, reducing overall energy consumption.
  • Thermal Performance: Superior thermal characteristics ensure stability and longevity even in high-temperature environments.
  • Reliability: NXP's commitment to quality means that the MRF281SR1 is built to last and perform reliably over time.

The MRF281SR1 also features an integrated ESD protection system, safeguarding the device against electrostatic discharge and enhancing its durability. Its compact design allows for ease of integration into various circuit configurations, offering flexibility for designers.

For engineers and designers looking for a robust, high-performance RF power transistor, the MRF281SR1 from NXP Semiconductors is an exceptional choice. It combines cutting-edge technology with reliability, making it a key component in the advancement of RF power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.6363 $66.5452
8+ $13.6503 $109.2024
12+ $13.2238 $158.6856
16+ $12.7972 $204.7552
21+ $12.3706 $259.7826
28+ $11.0909 $310.5452
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Availability: 572 pieces
MOQ: 4 pcs
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