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MRF6P18190HR5

Part No MRF6P18190HR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 1.88GHZ NI-1230 / Trans RF MOSFET N-CH 68V 5-Pin NI-1230 T/R
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 1.88GHz
Gain 15.9dB
Voltage - Test 28V
Current - Test 2A
Power - Output 44W
Voltage Rating DC 68V
Package NI-1230
Manufacturer Package NI-1230
Win Source Part Number 789437-MRF6P18190HR5
Popularity Medium
Supply and Demand Status Limited
Family Name MRF6P18190H
Introduction Date April 04, 2005
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF6P18190HR5 CAD Model

Description

Introducing the MRF6P18190HR5 RF Power Transistor

The MRF6P18190HR5 is a high-performance RF power LDMOS transistor designed and manufactured by NXP Semiconductors, a leader in the industry. This device is specifically engineered to deliver outstanding power and efficiency in high-frequency applications, making it an ideal choice for a wide range of RF energy applications including cellular base station transmitters, broadcast transmitters, and industrial, scientific, and medical (ISM) applications.

Key Features

  • Frequency Range: The transistor operates within a frequency range of 1800-2000 MHz, which covers various communication bands, making it versatile for multiple RF applications.
  • High Output Power: With an impressive output power of 180W CW, the MRF6P18190HR5 can handle demanding power requirements, ensuring reliable performance in high-power systems.
  • High Gain: The device offers a high gain of 16 dB, which means that it can amplify an RF signal significantly without the need for multiple stages of amplification.
  • High Efficiency: The MRF6P18190HR5 boasts an excellent efficiency of 34%, reducing energy consumption and heat dissipation, which is critical for maintaining the longevity and reliability of the system.
  • Integrated ESD Protection: Built-in electrostatic discharge (ESD) protection enhances the durability of the transistor by safeguarding it against unexpected voltage spikes.
  • Ruggedness: The device is capable of withstanding a 10:1 voltage standing wave ratio (VSWR) at 28 VDC, 180W CW output power, which attests to its robustness in mismatched load conditions.

Advanced Technology

The MRF6P18190HR5 utilizes NXP's advanced LDMOS technology, which is renowned for its high power density and reliability. This technology ensures that the device can deliver consistent performance even under strenuous conditions.

Applications

Its combination of high power, efficiency, and frequency range makes the MRF6P18190HR5 perfect for applications such as:

  • Telecommunication infrastructure, particularly in cellular base stations for 2G, 3G, and 4G networks.
  • RF energy applications, including industrial heating and welding, medical diagnostics and treatment, and cooking and defrosting.
  • Broadcasting equipment, where high-quality signal transmission is paramount.

With its robust design and advanced features, the MRF6P18190HR5 from NXP stands out as a superior choice for designers and engineers looking to enhance their RF power capabilities in a compact and efficient package.

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