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MRF6P27160HR5

Part No MRF6P27160HR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 2.66GHZ NI-1230  /  RF Mosfet LDMOS 28 V 1.8 A 2.66GHz 14.6dB 35W NI-1230
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type LDMOS
Frequency 2.66GHz
Gain 14.6dB
Voltage - Test 28 V
Current - Test 1.8 A
Power - Output 35W
Voltage - Rated 68 V
Package / Case NI-1230
Supplier Device Package NI-1230
Base Product Number MRF6
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 5A991G
HTSUS 8541.29.0075
Standard Package 50
Win Source Part Number 1029346-MRF6P27160HR5
Ultra Librarian 3D Model Ultra Librarian MRF6P27160HR5 CAD Model

Description

The MRF6P27160HR5 by NXP Semiconductors is a high-performance RF power LDMOS transistor optimized for broadband operations. It is designed to meet the demanding requirements of high-power applications, including broadcast transmitters, industrial, scientific, and medical (ISM) applications, as well as RF energy and large signal applications.

Key Features

  • Frequency Range: This device is capable of operating over a wide frequency range, making it suitable for various applications.
  • High Output Power: With an impressive output power, the MRF6P27160HR5 is designed to deliver strong performance in high-power RF systems.
  • High Gain: The transistor offers high gain, which translates to better signal amplification and overall efficiency in RF power amplification.
  • High Efficiency: Energy efficiency is a critical aspect of RF devices, and the MRF6P27160HR5 does not disappoint, ensuring reduced operational costs and heat dissipation.
  • Integrated ESD Protection: Electrostatic discharge protection is built into the device to enhance its durability and reliability in harsh environments.
  • Thermally Enhanced Package: The transistor comes in a thermally efficient package that aids in heat dissipation, supporting stable operation under high-temperature conditions.

Applications

The versatility of the MRF6P27160HR5 allows it to be used in a variety of applications. Its robust design is ideal for:

  • Broadcast transmitters for radio and television.
  • Industrial heating and welding equipment.
  • Medical applications such as MRI and RF ablation.
  • Scientific research equipment requiring high-power RF sources.
  • Plasma generation for semiconductor processing.

Product Specifications

The MRF6P27160HR5 boasts impressive technical specifications that ensure its performance and reliability:

  • Supply Voltage (Vdd): Specified for optimal operation.
  • Output Power (Pout): High output power rating.
  • Power Gain (Gp): High gain for efficient signal amplification.
  • Efficiency: Excellent efficiency to optimize system performance.
  • Load Mismatch Tolerance: Ability to withstand load mismatch conditions.

For detailed specifications and operational parameters, refer to the MRF6P27160HR5 datasheet provided by NXP Semiconductors.

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