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MRF6S21140HR5

Part No MRF6S21140HR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 2.12GHZ NI-880
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity LDMOS
Frequency 2.12GHz
Gain 15.5dB
Voltage - Test 28V
Current - Test 1.2A
Power - Output 30W
Voltage Rating 68V
Case / Package NI-880
Win Source Part Number 1079724-MRF6S21140HR5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MRF6S21140HR5 CAD Model

Description

The MRF6S21140HR5 is a high-performance RF power transistor from the renowned semiconductor manufacturer NXP Semiconductors. Designed to deliver exceptional efficiency and power, this device is part of NXP's advanced LDMOS (Laterally Diffused Metal Oxide Semiconductor) line of transistors, which are specifically engineered for RF power amplification applications.

Key Features

  • Frequency Range: This transistor operates within the 2.11-2.17 GHz frequency range, making it suitable for high-frequency applications such as cellular base station amplifiers, particularly those used in 3G and 4G networks.
  • High Output Power: The MRF6S21140HR5 provides a high output power of up to 28 Watts, ensuring strong signal amplification for robust communication links.
  • High Gain: With a high gain of 15.3 dB, this transistor amplifies RF signals effectively, which is critical for maintaining signal integrity over long distances.
  • High Efficiency: It boasts an excellent efficiency of up to 35%, minimizing energy loss and heat generation, which is vital for maintaining the reliability and longevity of the device.
  • Integrated ESD Protection: The device includes integrated electrostatic discharge (ESD) protection features, safeguarding the transistor against sudden voltage spikes and enhancing its durability.

Applications

The MRF6S21140HR5 is ideal for a range of RF power amplification needs, including:

  • Cellular base station amplifiers for 3G and 4G networks
  • RF power modules and pallets
  • Industrial, scientific, and medical (ISM) applications

Package and Quality

Encased in a robust ceramic package, the MRF6S21140HR5 is designed to withstand harsh environmental conditions, making it suitable for outdoor as well as indoor use. NXP's commitment to quality ensures that each transistor meets stringent industry standards for performance and reliability.

For detailed specifications, application notes, and additional resources, customers are encouraged to visit the official NXP Semiconductors website or contact authorized distributors. The MRF6S21140HR5 is not just a component; it's a powerful building block for high-performance RF systems.

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