EN
  • EN
  • DE

MRF6V2010NBR5

Part No MRF6V2010NBR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 110V 220MHZ TO-272-2 / RF Mosfet 50 V 30 mA 220MHz 23.9dB 10W TO-272-2
Datasheet
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>RF FETs, MOSFETs
Mfr NXP
Series -
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 220MHz
Gain 23.9dB
Voltage - Test 50 V
Current Rating (Amps) -
Noise Figure -
Current - Test 30 mA
Power - Output 10W
Voltage - Rated 110 V
Mounting Type Chassis Mount
Package / Case TO-272BC
Supplier Device Package TO-272-2
Base Product Number MRF6
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Standard Package 50 pcs
Win Source Part Number 1382955-MRF6V2010NBR5
Ultra Librarian 3D Model Ultra Librarian MRF6V2010NBR5 CAD Model

Description

The MRF6V2010NBR5 from NXP Semiconductors is a high-performance RF power LDMOS transistor designed for commercial, industrial, and military applications. This device is specifically engineered to deliver exceptional power and efficiency in high-frequency operations, making it an ideal choice for a wide array of RF energy applications including broadcast transmitters, cellular base stations, and RF heating.

Key Features

  • Frequency Range: The MRF6V2010NBR5 operates effectively within the 1.8-2000 MHz frequency range, providing versatile use across various frequency bands.
  • Output Power: It offers an impressive output power of 10 W CW, ensuring substantial signal strength for a multitude of RF applications.
  • Gain: With a high gain of 18 dB, this transistor can amplify weak signals to required levels with minimal additional components.
  • Efficiency: The device boasts a high efficiency of 50%, minimizing power loss and heat generation, which is crucial for maintaining the longevity and reliability of the system.
  • Integrated ESD Protection: It includes built-in ESD protection, safeguarding the device against unexpected electrostatic discharges during handling and operation.
  • Thermal Resistance: The low thermal resistance characteristic of this transistor ensures effective heat dissipation, which is vital for maintaining performance under high-power conditions.

Applications

The MRF6V2010NBR5 is suitable for a variety of applications, including but not limited to:

  • RF power amplifiers for FM and TV broadcast transmitters
  • Industrial, scientific, and medical (ISM) applications
  • Cellular base station amplifiers for GSM, CDMA, and LTE networks
  • High-power linear amplifiers in military communications systems

Quality and Reliability

NXP is known for its commitment to quality, and the MRF6V2010NBR5 is no exception. Each transistor is meticulously crafted to meet high standards, ensuring consistent performance and durability across its operational lifespan. For engineers and designers looking for a reliable and efficient RF power solution, the MRF6V2010NBR5 is an outstanding choice that combines cutting-edge technology with robust design.

You May Also Be Interested in

Hitachi, Ltd
Silicon N-Channel MOS FET UHF Power Amplifier
Need more? Email Us
Infineon Technologies
OptiMOSTM Power-MOSFET
Lowest to $0.7540
Vishay
N-Channel 200-V (D-S) 175C MOSFET
Lowest to $2.7120
Renesas Electronics America
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Lowest to $7.5410
SANYO Semiconductor (U.S.A) Corporation
Ultrahigh-Speed Switching Applications
Lowest to $27.0651
Supertex, Inc
P-Channel Enhancement-Mode Vertical DMOS FETs
Lowest to $0.5971
Hitachi, Ltd
Silicon P Channel MOS FET Low FrequencyPower Switching
Need more? Email Us
Toshiba Semiconductor and Storage
Switching Regulator Applications
Lowest to $1.6817
Zetex Semiconductors
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Lowest to $0.5047

Top Sellers

Atheros
Ethernet TXRX Single Chip 1-Port 3.3V 10Mbps/100Mbps/1000Mbps 48-Pin QFN EP Tray
Lowest to $2.6071
Vicor Corporation
DC DC CONVERTER 10-50V / 8V – 60VIN , 10V – 50VOUT , 50 – 140W Cool-Power ZVS Buck-Boost Regulator
Lowest to $41.3948
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.9399
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.3053
TDK InvenSense
MOTION SENSOR / Accelerometer, Gyroscope, 6 Axis Sensor Output
Lowest to $17.8196
Bosch Sensortec
SENSOR PRESSURE HUMIDITY TEMP
Lowest to $3.9204
TDK InvenSense
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Lowest to $10.4542
ON Semiconductor
MOSFET N-CH 20V 915MA SOT-416
Lowest to $0.0543
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $5.9399
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.3053
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.9399
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
Altera
IC CPLD 128MC 10NS 100TQFP
Lowest to $3.3015
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
JST Sales America Inc.
CONN HEADER SMD 6POS 1.25MM
Lowest to $0.4985
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess