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RND030N20TL

Part No RND030N20TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3A CPT3 / N-Channel 200 V 3A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Rohm Semiconductor
Series -
Package Tape & Reel (TR)
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 870mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 25 V
FET Feature -
Power Dissipation (Max) 850mW (Ta), 20W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package CPT3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number RND030
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500 pcs
Win Source Part Number 1383336-RND030N20TL
Ultra Librarian 3D Model Ultra Librarian RND030N20TL CAD Model

Description

The RND030N20TL is an N-channel MOSFET transistor designed for high-power applications.

  • Mounting Type: Surface Mount
  • Package: Tape & Reel
  • Drain to Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 3A
  • On-Resistance (Rds On): 870mOhm
  • Gate Threshold Voltage (Vgs(th)): 5.2V
  • Manufacturer: Rohm Semiconductor

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.4500 $58.5000
315+ $0.3693 $116.3295
485+ $0.3577 $173.4845
670+ $0.3462 $231.9540
865+ $0.3347 $289.5155
1,155+ $0.3001 $346.6155
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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