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MRF6V2010NR1

Part No MRF6V2010NR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 110V 220MHZ TO270-2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 220MHz
Gain 23.9dB
Voltage - Test 50 V
Current - Test 30 mA
Power - Output 10W
Voltage - Rated 110 V
Mounting Type Surface Mount
Package / Case TO-270AA
Supplier Device Package TO-270-2
Base Product Number MRF6
Standard Package 500 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 644208-MRF6V2010NR1
Ultra Librarian 3D Model Ultra Librarian MRF6V2010NR1 CAD Model

Description

Product Overview: MRF6V2010NR1

The MRF6V2010NR1 is a high-performance RF power transistor from NXP Semiconductors, designed to deliver reliable and efficient power amplification in a wide range of applications. This device is a part of NXP's renowned RF MOSFET product line and is particularly suited for use in broadcast transmission, industrial, scientific, and medical (ISM) applications, as well as various RF energy solutions.

Key Features

  • Frequency Range: The MRF6V2010NR1 operates effectively across a broad frequency range, making it versatile for various high-frequency applications.
  • High Output Power: This transistor is capable of delivering a high output power level, which is essential for applications requiring strong signal amplification.
  • High Gain: With its high gain performance, the MRF6V2010NR1 ensures that signals are amplified with minimal loss, maintaining signal integrity and strength.
  • Efficiency: The device is engineered for enhanced efficiency, which translates to lower energy consumption and reduced thermal load, improving the overall system reliability and longevity.
  • Ruggedness: Designed to withstand harsh conditions, the MRF6V2010NR1 is rugged and durable, ensuring consistent performance even under strenuous operating circumstances.

Applications

The versatility of the MRF6V2010NR1 allows it to be used in a multitude of applications, including but not limited to:

  • FM broadcast transmitters
  • Industrial heating and plasma generation
  • Medical diagnostics and treatment systems
  • RF energy and cooking
  • Solid-state RF power sources

Technical Specifications

The MRF6V2010NR1 is built with the following technical specifications that make it a robust choice for designers:

  • Voltage: It operates at a specified voltage, providing stable performance across its range.
  • Thermal Resistance: The device features a thermal resistance that ensures it operates within safe temperature limits.
  • Package: Encased in a compact and reliable package, the MRF6V2010NR1 is designed for easy integration into a wide range of systems.

In conclusion, the MRF6V2010NR1 from NXP Semiconductors is a powerful and reliable transistor that stands out for its efficiency, ruggedness, and versatility, making it an ideal choice for designers looking for a high-quality RF amplification solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $93.2331 $93.2331
2+ $90.2256 $180.4512
3+ $87.2181 $261.6543
4+ $78.1955 $312.7820
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* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 500 pieces
Order Increment : 1 pcs
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