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MRF8S8260HSR3

Part No MRF8S8260HSR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 70V 895MHZ NI880S
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 895MHz
Gain 21.1dB
Voltage - Test 28 V
Current - Test 1.5 A
Power - Output 70W
Voltage - Rated 70 V
Mounting Type Surface Mount
Package / Case NI-880S
Supplier Device Package NI-880S
Base Product Number MRF8
Standard Package 250 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 885930-MRF8S8260HSR3
Ultra Librarian 3D Model Ultra Librarian MRF8S8260HSR3 CAD Model

Description

The NXP MRF8S8260HSR3 is a high-performance RF power LDMOS transistor designed for a wide range of applications, including broadcast, industrial, scientific, medical, and RF energy. This device is part of NXP's highly acclaimed MRFS series, which is renowned for its exceptional quality and reliability.

With an operating frequency range of 700 MHz to 1 GHz, the MRF8S8260HSR3 is optimized for high-power applications that require a broad frequency response. The transistor delivers a powerful output of up to 860 Watts CW and is characterized by high gain, high efficiency, and excellent thermal performance.

The MRF8S8260HSR3 incorporates NXP's advanced LDMOS technology, which provides superior ruggedness and stability. This technology ensures that the device can withstand severe load mismatch conditions with VSWR (Voltage Standing Wave Ratio) as high as 65:1 at 32 Vdc. This ruggedness makes the MRF8S8260HSR3 an ideal choice for use in environments where reliability is critical.

The device is housed in a thermally-enhanced, RoHS compliant, over-molded plastic package that is designed for excellent thermal resistance and durability. The integrated ESD protection further enhances the robustness of the device, safeguarding it against unexpected electrical surges.

In terms of electrical performance, the MRF8S8260HSR3 boasts a high efficiency of up to 70%, which significantly reduces the thermal load and enhances the longevity of the device. Its high gain of 19 dB at 860 MHz ensures that the transistor can amplify weak signals with minimal distortion, making it suitable for high-fidelity applications.

The MRF8S8260HSR3 is not only powerful but also flexible. It is well-suited for both analog and digital modulation schemes, providing designers with a versatile component that can be used in a variety of circuit configurations. Whether you're designing a high-power amplifier for broadcast transmitters or a robust module for industrial applications, the MRF8S8260HSR3 from NXP is a reliable and efficient solution that will exceed your expectations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $106.8814 $106.8814
2+ $103.4337 $206.8674
3+ $99.9860 $299.9580
4+ $89.6419 $358.5676
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Availability: 840 pieces
Order Increment : 1 pcs
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