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MRF9030LR1

Part No MRF9030LR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 945MHZ NI-360 / RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer NXP USA Inc.
Packaging Reel
Part Status Obsolete (End Of Life)
Transistor Type LDMOS
Frequency 945MHz
Gain 19dB
Voltage - Test 26V
Current - Test 250mA
Power - Output 30W
Voltage - Rated 68V
Manufacturer Package NI-360
Supplier Device Package NI-360
Part Number Series MRF9030
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 811722-MRF9030LR1
Ultra Librarian 3D Model Ultra Librarian MRF9030LR1 CAD Model

Description

The MRF9030LR1 is a high-performance RF power transistor designed and manufactured by NXP Semiconductors. This device is part of NXP's renowned RF power LDMOS transistor line, which is widely acclaimed for its high efficiency, reliability, and robustness in demanding applications. The MRF9030LR1 is specifically engineered to deliver outstanding performance in RF power amplification, making it an ideal choice for a broad range of applications, including but not limited to, professional mobile radio, aerospace, and radar systems.

Key Features:

  • Frequency Range: The MRF9030LR1 operates within a frequency range of 890-960 MHz, making it well-suited for various communication bands, particularly those used in GSM and CDMA mobile systems.
  • High Output Power: It is capable of delivering a high output power level, typically up to 30 Watts CW, which ensures strong signal transmission and reception for reliable communication.
  • High Gain: The transistor provides a high gain of typically 18 dB, which translates to less power required at the input for a given output, thereby improving overall system efficiency.
  • Efficiency: With a high efficiency of up to 60%, the MRF9030LR1 ensures that the energy is used effectively, reducing heat dissipation and power consumption.
  • Integrated ESD Protection: Built-in electrostatic discharge (ESD) protection enhances the durability of the device, ensuring it withstands the rigors of real-world usage.
  • Thermally Enhanced Package: The device comes in a thermally enhanced package that supports excellent thermal management, ensuring stable performance even under high-temperature operating conditions.

Applications:

The MRF9030LR1 is versatile and can be used in a variety of applications that require robust and efficient RF power amplification. Its primary applications include base station transceivers for mobile radio, RF heating, industrial lasers, and plasma generators. Additionally, it is suitable for use in RF power amplifiers for aerospace and radar systems where high reliability and performance are critical.

With its combination of high performance, efficiency, and reliability, the MRF9030LR1 from NXP Semiconductors stands out as a superior choice for designers looking to enhance their RF power amplification systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $54.1667 $54.1667
3+ $44.4445 $133.3335
4+ $43.0556 $172.2224
5+ $41.6667 $208.3335
7+ $40.2778 $281.9446
9+ $36.1111 $324.9999
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7 pieces
Order Increment : 1 pcs
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