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MRFE6VP5600HSR5

Part No MRFE6VP5600HSR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 130V 230MHZ NI1230S / RF Mosfet LDMOS (Dual) 50 V 100 mA 230MHz 25dB 600W NI-1230-4S
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel (TR)
Transistor Type LDMOS (Dual)
Frequency 230MHz
Gain 25dB
Voltage - Test 50 V
Current - Test 100 mA
Power - Output 600W
Voltage - Rated 130 V
Package / Case NI-1230-4S
Supplier Device Package NI-1230-4S
Base Product Number MRFE6
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 935319677178
Standard Package 50
Win Source Part Number 1022251-MRFE6VP5600HSR5
Ultra Librarian 3D Model Ultra Librarian MRFE6VP5600HSR5 CAD Model

Description

Introducing the MRFE6VP5600HSR5 RF Power LDMOS Transistor

The MRFE6VP5600HSR5 is a state-of-the-art RF power LDMOS transistor designed and manufactured by NXP Semiconductors. This high-performance device is engineered to deliver exceptional power and efficiency, making it an ideal choice for a wide range of applications, including broadcast transmission, industrial, scientific, medical (ISM) applications, and RF energy solutions.

Key Features and Benefits

  • Wide Frequency Range: The MRFE6VP5600HSR5 operates over a broad frequency range from 1.8 to 600 MHz, providing versatility for various RF applications.
  • High Output Power: With an impressive output power of up to 600W CW, this transistor is capable of delivering the power needed for high-demand applications.
  • High Efficiency: The device offers a high drain-source efficiency of 75%, minimizing energy loss and heat generation, thereby increasing the reliability and lifespan of your application.
  • Ruggedness: It is designed to withstand a VSWR of 65:1 at 50V, ensuring robust performance even under severe load mismatch conditions.
  • Integrated ESD Protection: The MRFE6VP5600HSR5 comes with integrated ESD protection, providing enhanced reliability and protection against sudden electrostatic discharges.
  • Thermally Enhanced Package: Housed in a ceramic package, the transistor provides excellent thermal stability and performance consistency.

Applications

The versatility of the MRFE6VP5600HSR5 allows it to be used in a variety of applications, including but not limited to:

  • Broadcast transmitters for AM, FM, and TV
  • Industrial heating, welding, and drying systems
  • Plasma generation for semiconductor manufacturing
  • Medical applications such as MRI and RF ablation
  • Particle accelerators and fusion research

Why Choose MRFE6VP5600HSR5?

Choosing the MRFE6VP5600HSR5 from NXP means selecting a product that offers a blend of performance, efficiency, and reliability. Its robust design and versatile frequency range make it a top choice for engineers and designers looking to enhance their RF power capabilities. Whether you're working on a new broadcast transmitter or developing sophisticated industrial equipment, the MRFE6VP5600HSR5 is the component that can help you achieve your design goals with confidence.

Trust NXP's expertise and experience in RF technology to power your next project with the MRFE6VP5600HSR5, delivering the performance you need without compromise.

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